ICS 105 set 四轴IC集成芯片 近场辐射扫描仪

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Product Description

 

ICS 105 SET

ICS 105 set简介:

ICS 105 set是由德国langer-emv生产并由深圳EUTTEST代理销售的集成电路扫描仪,ICS 105可以对小型IC((50x50x50) mm空间范围)和小型PCB近场高频近场测量,空间分辨率高达50μm,可选配 1.5MHz 至 6GHz的H场和E场探头用于产品的CI集成电路或小型PCB进行测试。

ICS 105 set系统测试图
ICS 105 set系统测试图

 

ICS105 set发货清单:

1x ICS 105主机

1x CS-Scanner, ChipScan-Scanner 软件

1x GND 25, 符合IEC61967标准的接地板

1x DM-CAM 高分辨率相机

1x ICS 105 acc 附件

1x ICS Flight case 包装箱

ICS105 set技术参数:

设备供电电压110V或220V
电脑通讯端口USB
最大移动空间(X轴 x Y轴 x Z轴) mm

(50 x 50 x 50) mm / α-Rotation ±180°

最小移动空间(X轴 x Y轴 x Z轴) mm

(10 x 10 x 10) µm / α-Rotation 1°

移动速度(X轴 x Y轴 x Z轴) mm

(2 x 2 x 2) mm/s / α-Rotation 45°/s

重量23kg
规格大小350 mmx 400mm x 420mm
ICS 105配合近场探头进行3D扫描效果图
ICS 105配合近场探头进行3D扫描效果图

 

ICS 105配合近场探头进行表面扫描效果图
ICS 105配合近场探头进行表面扫描效果图

 

ICS105 set可选附件

E场探头ICR E150 set

微型近场探头 ICR E150:可用频率7 MHz – 3 GHz

H场探头ICR HH H Field(接收垂直方向的磁场线)

HH100代表探头尖端的内部直径(μm);

ICR HH100-27:可用频率 1.5 MHz – 6 GHz

ICR HH100-6:可用频率 2.5 MHz – 6 GHz

ICR HH150-27:可用频率1.5 MHz – 6 GHz

ICR HH150-6:可用频率 2.5 MHz – 6 GHz

ICR HH250-6:可用频率 2.5 MHz – 6 GHz

ICR HH250-75:可用频率 0.5 MHz – 2GHz

ICR HH500-6:可用频率 2 MHz – 6 GHz

ICR HH500-75:可用频率 200kHz – 1 GHz

ICR HV H Field(接收水平方向的磁场线)

HV100代表探头尖端的内部直径(μm);

ICR HV100-27:可用频率 1.5 MHz – 6 GHz

ICR HV100-6:可用频率 2.5 MHz – 6 GHz

ICR HV150-27:可用频率1.5 MHz – 6 GHz

ICR HV150-6:可用频率 2.5 MHz – 6 GHz

ICR HV250-6:可用频率 2.5 MHz – 6 GHz

ICR HV250-75:可用频率 0.5 MHz – 2GHz

ICR HV500-6:可用频率 2 MHz – 6 GHz

ICR HV500-75:可用频率 200kHz – 1 GHz

手持探头

含电场和磁场

LFS, Passive, 100 kHz up to 50 MHz

LFS-B 3: 100 kHz up to 50 MHz

RFS, Passive, 30 MHz up to 3 GHz
RFS set, Scanner Probes 30 MHz up to 3 GHz

The RFS set consits of three passive near field probes designed for the use in a measurement scanner during the development of E-field and magnetic field.

RFS-R 50-1, Scanner Probe 30 MHz up to 3 GHz

The RFS-R 50-1 H-field probe is designed for taking field measurements on assemblies, devices or cables at a distance of up to approx. 3 cm. The H-field probe can be used to identify larger components as sources of interference.

RFS-R 3-2, Scanner Probe 30 MHz up to 3 GHz

RFS-R 0.3-3, Scanner Probe 30 MHz up to 3 GHz
RFS-B 3-2, Scanner Probe 30 MHz up to 3 GHz

The measurement coil of the RFS-B 3-2 H-field probe is arranged orthogonally to the probe shaft. This allows the probe head to be positioned very close to the assembly and to achieve a strong coupling. The RFS-B 3-2 detects magnetic field lines, which exit the measuring object othogonally. Magnetic …

RFS-B 0.3-3, Scanner Probe 30 MHz up to 3 GHz
RFS-E 02, Scanner Probe 30 MHz up to 3 GHz
RFS-E 03, Scanner Probe 30 MHz up to 3 GHz

Using the approx. 4×4 mm electrode, which is located in the bottom of the RFS-E 03 probe head, E-fields from clocked lines, IC pins, and smaller components can be detected.

RFS-E 05, Scanner Probe 30 MHz up to 3 GHz
RFS-E 10, Scanner Probe 30 MHz up to 3 GHz
XFS, Passive, 30 MHz – 6 GHz
XFS-R 3-1, Scanner Probe 30 MHz up to 6 GHz

The XFS-R 3-1 near-field probe is designed for direct high-resolution measurements of RF magnetic fields on an assembly, e.g. around the pins and IC cases, conducting paths, decoupling capacitor, and EMC components.

XFS-B 3-1, Scanner Probe 30 MHz up to 6 GHz

The measurement coil of the XFS-B 3-1 H-field probe is set at a 90° angle to the probe shaft. By positioning the probe head vertically, the measurement coil touches the surface of the printed circuit board directly. This allows for use at places on the surface of printed circuit boards, which are t…

XFS-E 10, Scanner Probe 30 MHz up to 6 GHz

The electrode in the probe head of the XFS-E 10 has a width of approx. 0.2 mm. With the probe even smallest E-field sources can be located, e.g. conducting paths with a width of 0.1 mm or single pins on multi pinned ICs. To measure, the E-field probe is positioned onto the object.

XFS-E 09s, Scanner Probe 30 MHz up to 6 GHz

The electrode on the probe head of the XFS-E 09 detects electrical fields which, for example are decoupled above the IC’s surface. The probe’s resolution allows for measurements with a distance of 0.5 mm to 10 mm above an assembly.

 

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